Method of making a p-n homojunction in a nanostructure

摘要

the invention relates to a process for making a p-n junction in a nano structure (1), in which the nano structure (1) has one or more nanoconstituant (s) (s) of a semiconductor material of one conductivity type having a doping type, defined if, in that it includes a step of forming a dielectric element (3), 32,.the nanostructure coating, 3n) (1) of a height h, the dielectric element with a surface potential is able to reverse the conductivity type of a determined w or nanoconstituant (s) and (s) with the height.