FINE GAP-FILL POLYMERS, FINE GAP-FILLING COMPOSITIONS COMPRISING SAME, AND METHOD FOR MAKING INTEGRATED CIRCUIT SEMICONDUCTOR DEVICES USING SAME

摘要

The present invention relates to fine gap-fill polymers and fine gap-filling compositions including same, and includes an organosilane polymer system which has the compound represented by Formula 1 as a substituent at its terminus. [Formula 1] HOOC-(CH₂)_l-R¹₂Si-O-SiR¹'₂-(CH₂)_l-COOH, wherein R¹, R¹', and l of Formula 1 are defined and described in the description. Accordingly. the present invention provides a method for manufacturing integrated circuit semiconductor devices using the fine gap-filling compositions which have excellent gap-filling ability and good storage stability characteristics.