METHODS FOR MAKING A STACK OF MEMORY CIRCUITS AND FOR ADDRESSING A MEMORY CIRCUIT, AND CORRESPONDING STACK AND DEVICE

摘要

The invention relates to a method (10) for making a stack of memory circuits, wherein said method comprises the step (14) of testing the validity of at least two memory circuits. According to the invention, the method comprises the phase (18) of configuring each memory circuit, the configuration phase including the step (110) of writing, within a configuration device of each memory circuit included in the stack, a piece of information on an identifier allocated to the memory circuit in the stack, and a piece of information on the results of the validity test of the memory circuit. The invention also relates to a method for addressing a memory circuit, to a stack of memory circuits, and to an electronic device including such a stack.