PHASE CHANGE MEMORY DEVICE AND A TEST CIRCUIT FOR THE SAME, CAPABLE OF REDUCING TIME FOR TESTING A SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A phase change memory device and a test circuit for the same are provided to simultaneously test several memory cells by directly supplying currents to the memory cells in a test operation.;CONSTITUTION: A current from current source is supplied to a pad(210). A switching part(220) transfers data according to the current to a global bit-line switch(GYSW) through a sense amplifying input-output line(SIO) in respond to a test mode signal(TM). If the test mode signal is enabled, the switching part is turned on. The data transferred through the global bit-line switch is recorded in a memory cell which is selected by a column address.;COPYRIGHT KIPO 2011