MANUFACTURING METHOD OF A METAL OXIDE LAYER, CAPABLE OF REDUCING THE SURFACE ROUGHNESS OF A METAL OXIDE LAYER, A THIN FILM TRANSISTOR SUBSTRATE THEREOF, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A manufacturing method of a metal oxide layer, a thin film transistor substrate thereof, and a manufacturing method thereof are provided to improve the surface roughness, charge mobility, and crystallization of a metal oxide layer by controlling chamber pressure.;CONSTITUTION: A first metal oxide layer(11) is formed on a substrate(10). The first metal oxide layer has first charge mobility. A second metal oxide layer(12) is formed to be directly contacted on the first metal oxide layer. The second metal oxide layer has second charge mobility which is different from the first charge mobility.;COPYRIGHT KIPO 2011