METHOD AND APPARATUS FOR PRODUCING THE ELECTRICAL CHARACTERISTIC OF THE AMORPHOUS SEMICONDUCTOR T F T PERFORMING THE EXACT SIMULATION ABOUT THE AMORPHOUS SEMICONDUCTOR TFT

摘要

PURPOSE: By providing the exact model parameter which a method and apparatus for producing the electrical characteristic of the amorphous semiconductor T F T can be used for the simulation for the amorphous semiconductor TFT.;CONSTITUTION: The light is examined in the amorphous semiconductor TFT and the light response characteristics of C-V is measured at(110). The electric capacity of the case of examining the light and the case which does not examine the light is calculated and it is modelled to the function of C-V(120).;COPYRIGHT KIPO 2011