首页> 外国专利> BIPOLAR TRANSISTOR STRUCTURE AND A METHOD FOR INCLUDING EMITTER-BASE INTERFACE IMPURITY, WHICH INCLUDES OXYGEN IMPURITY, FLUORINE IMPURITY, OR CARBON IMPURITY

BIPOLAR TRANSISTOR STRUCTURE AND A METHOD FOR INCLUDING EMITTER-BASE INTERFACE IMPURITY, WHICH INCLUDES OXYGEN IMPURITY, FLUORINE IMPURITY, OR CARBON IMPURITY

机译:双极晶体管结构和包括发射极-基界面杂质的方法,其中包括氧杂质,氟杂质或碳杂质

摘要

PURPOSE: A bipolar structure and a method for including emitter-base interface impurity are provided to include a collector structure on at least part of a semiconductor substrate and a base structure in contact with the collector structure.;CONSTITUTION: A semiconductor substrate(10) includes a collector structure. The base structure is in contact with the collector structure. An emitter structure is in contact with the base structure. Interface is arranged between the emitter structure and the base structure. Impurity selected from oxygen impurity, fluorine impurity, or carbon impurity is included in the interface between the emitter structure and the base structure.;COPYRIGHT KIPO 2011
机译:目的:提供一种双极结构和包括发射极-基极界面杂质的方法,以包括在半导体衬底的至少一部分上的集电极结构和与该集电极结构接触的基极结构。组成:半导体衬底(10)包括收集器结构。基础结构与收集器结构接触。发射极结构与基础结构接触。界面布置在发射极结构和基础结构之间。在发射极结构和基极结构之间的界面中包括选自氧杂质,氟杂质或碳杂质的杂质。; COPYRIGHT KIPO 2011

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