METHOD FOR FORMING AN ELECTRONIC DEVICE, CAPABLE OF IMPROVING A LINE-WIDTH-ROUGHNESS IN A RESIST PATTERN

摘要

PURPOSE: A method for forming an electronic device is provided to be used for a contraction process and a dual patterning process by precisely controlling the critical dimension of a lithography pattern.;CONSTITUTION: A semiconductor substrate(100) including one or more layers to be patterned(102) is prepared. A first photo-resist layer(106) is applied on the layers to be patterned. The first photo-resist layer is exposed to an active radiation ray through a patterning photo-mask(110). The exposed first photo-resist layer is developed to form a resist pattern(106'). A second photo-resist layer is applied on the layers to be patterned. The second photo-resist layer is exposed to the active radiation ray. The exposed second photo-resist layer is developed, and a part of the second photo-resist layer is remained.;COPYRIGHT KIPO 2011