MANUFACTURING METHOD ONE TIME PROGRAMMABLE MEMORY DEVICE AND MEMORY CELL STRUCTURE THEREOF

摘要

PURPOSE: A method for manufacturing a one time programmable memory and a memory cell structure are provided to stably maintain the performance of an OTP ROM device by decreasing influences on a manufacturing process. CONSTITUTION: Gate electrodes of a select transistor(40) and a memory transistor are formed by patterning a poly silicon layer. An LDD ion is implanted to an active area between the gate electrodes of the memory transistor and the select transistor. A spacer(60) is formed on the sides of the gate electrodes of the memory transistor and the select transistor. A source/drain ion implantation process is performed after a photosensitive pattern which masks the active area is formed. A silicide(70) is formed after the silicide preventing layer is etched by forming the photosensitive pattern.