TRANSISTOR, A METHOD FOR MANUFACTURING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE TRANSISTOR CAPABLE OF SUPPRESSING THE CHANGE OF CHARACTERISTICS DUE TO EXTERNAL ENVIRONMENT

摘要

PURPOSE: A transistor, a method for manufacturing the same, and an electronic device including the transistor are provided to improve the reliability of a flat display apparatus by being adapted to the flat display apparatus. ;CONSTITUTION: A multi-layered structure includes a silicon oxide layer(10), a silicon oxynitride layer(20), and a silicon nitride layer(30). The silicon oxide layer is capable of being formed at low temperature between 100 and 250 degrees Celsius or at high temperature between 250 and 450 degrees Celsius. The characteristic change of a channel layer(C1) is suppressed by a protective layer(P1). The thicknesses of a gate(G1), the channel layer, a gate insulating layer, a source electrode(S1), a drain electrode(D1), and a protective layer are respectively between 50 and 300nm, between 40 and 100nm, between 50 and 400nm, between 10 and 200nm, between 10 and 200nm, and between 250 and 1200nm.;COPYRIGHT KIPO 2011