THIN FILM TRANSISTOR CAPABLE OF REMOVING INTERFACE DEFECTS BETWEEN A GATE INSULATION LAYER AND AN ACTIVE LAYER AND A FORMING METHOD THEREOF

摘要

PURPOSE: A thin film transistor and a forming method thereof are provided to reduce electric stress between a gate insulation layer and an active layer by forming a buffer layer between the gate insulation layer and the active layer. ;CONSTITUTION: A source electrode and a drain electrode(122) are formed on a substrate(110). An oxide active layer(131) is formed between the source electrode and the drain electrode. A gate electrode(152) is formed on one side of the oxide active layer. A gate insulation layer(141) is formed between the gate electrode and the oxide active layer. A buffer layer(136) is formed between the gate insulation layer and the oxide active layer.;COPYRIGHT KIPO 2011