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THIN FILM TRANSISTOR AND A METHOD OF FABRICATING THE SAME, CAPABLE OF PREVENTING PROPERTY DETERIORATION DUE TO AN OFF-CURRENT
THIN FILM TRANSISTOR AND A METHOD OF FABRICATING THE SAME, CAPABLE OF PREVENTING PROPERTY DETERIORATION DUE TO AN OFF-CURRENT
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机译:薄膜晶体管及其制造方法,能够防止由于断路而造成的财产损失
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摘要
PURPOSE: A thin film transistor and a method of fabricating the same are provided to improve the property o a thin film transistor including poly-silicon by uniformly transferring the heat of laser through a thermal conductive layer. ;CONSTITUTION: A first metal material is deposited on a substrate(210) to form a first metal layer. A gate electrode(212) and a gate wiring(213) are formed by patterning the first metal layer. A gate insulating layer(214) covering the gate electrode and gate wiring is formed. A pure amorphous silicon layer and a second metal layer are formed on the gate insulating layer. A photoresist pattern(282) corresponds to the center of the gate electrode.;COPYRIGHT KIPO 2011
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