SEMICONDUCTOR MEMORY DEVICE DRIVING A PULL UP POWER LINE AND A PULL DOWN POWER LINE WITH SAME POWER

摘要

PURPOSE: A semiconductor memory device is provided to improve the operation performance of a bit line sense amplifier by optimizing the arrangement of a driving unit. ;CONSTITUTION: In a semiconductor memory device, a plurality of bit line sense amplifier array regions(120) is arranged in the column direction of the corresponding memory cell array region. A hole region(130) is arranged between adjacent bit line sense amplifier array regions. The power line normal driver of the bit line sense amplifier is arranged in the hole region. The power line over driver of the bit line sense amplifier is arranged in the array of the bit line amplifier and is comprised of a first pull up transistor and a second pull down transistor.;COPYRIGHT KIPO 2011