METHOD FOR FORMING A DEVICE ISOLATION LAYER OF A SEMICONDUCTOR DEVICE CAPABLE OF FORMING A SPACER INSULATION LAYER INSTEAD OF A PHOTO RESIST PATTERN

摘要

PURPOSE: A method for forming a device isolation layer of a semiconductor device is provided to improve productivity by optimizing the reliability without an additional mask. ;CONSTITUTION: An oxide film, a nitride film, and an insulation film(230) are successively formed on a semiconductor substrate. A photo resist pattern is formed on the insulation layer. A first trench is formed by etching a part of the semiconductor substrate, the oxide film, the nitride film, and the insulation layer by using the photo resist pattern as a mask. A spacer(270) is formed on both sidewalls of the first trench. A second trench(280) is formed by etching the semiconductor substrate on the lower side of the first trench using the spacer as the mask. The device isolation layer is formed by filling the insulation materials in the first and second trenches.;COPYRIGHT KIPO 2011