SEMICONDUCTOR DIODES FABRICATED BY ASPECT RATIO TRAPPING WITH COALESCED FILMS

摘要

PURPOSE: Semiconductor diodes fabricated by an aspect ratio trapping with coalesced films are provided to remove a silicon wafer substrate from a semiconductor to prevent the deterioration of the performance of a light emitting diode. CONSTITUTION: In semiconductor diodes fabricated by an aspect ratio trapping with coalesced films, a dielectric material comprises at least two opening exposing a part of a substrate having at least aspect ratio over l. A lower diode material(1030) is lattice-mismatched with the substrate, occupies more than two openings and a compound semiconductor material which forms a lower diode region by being merged on more than two opening. An active diode region is arranged between the upper diode material(1070) and the lower diode material.