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METHOD AND DEVICE FOR PLATING A COPPER LAYER ON WAFER CAPABLE OF PREVENTING DRAWBACKS IN THE COPPER LAYER WHEN THE COPPER LAYER IS PLATED ON THE WAFER
METHOD AND DEVICE FOR PLATING A COPPER LAYER ON WAFER CAPABLE OF PREVENTING DRAWBACKS IN THE COPPER LAYER WHEN THE COPPER LAYER IS PLATED ON THE WAFER
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机译:当将铜层放置在晶片上时,用于在晶片上放置铜层的方法和装置,以防止在铜层中出现缩孔
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摘要
PURPOSE: Method and device for plating a copper layer on wafer are provided to prevent drawbacks in the copper layer when the copper layer is plated, since washing solution to wash the surface of wafer is provided.;CONSTITUTION: A device for plating a copper layer on wafer comprises a container(100), a ceiling unit, copper anode(130), a diaphragm unit(160), a rotating unit, an electrolyte supply pipe, a first drain port and a second drain port. The container holds electrolyte. The ceiling unit closes the container and holds wafer(200) to face electrolyte. The copper anode is installed to face the wafer. The diaphragm unit divides the internal space of the container into an upper space(120) and a lower space(110). The diaphragm unit opens the central part so that electrolyte from the container makes contact from the central part of the wafer.;COPYRIGHT KIPO 2012
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