首页> 外国专利> METHOD AND DEVICE FOR PLATING A COPPER LAYER ON WAFER CAPABLE OF PREVENTING DRAWBACKS IN THE COPPER LAYER WHEN THE COPPER LAYER IS PLATED ON THE WAFER

METHOD AND DEVICE FOR PLATING A COPPER LAYER ON WAFER CAPABLE OF PREVENTING DRAWBACKS IN THE COPPER LAYER WHEN THE COPPER LAYER IS PLATED ON THE WAFER

机译:当将铜层放置在晶片上时,用于在晶片上放置铜层的方法和装置,以防止在铜层中出现缩孔

摘要

PURPOSE: Method and device for plating a copper layer on wafer are provided to prevent drawbacks in the copper layer when the copper layer is plated, since washing solution to wash the surface of wafer is provided.;CONSTITUTION: A device for plating a copper layer on wafer comprises a container(100), a ceiling unit, copper anode(130), a diaphragm unit(160), a rotating unit, an electrolyte supply pipe, a first drain port and a second drain port. The container holds electrolyte. The ceiling unit closes the container and holds wafer(200) to face electrolyte. The copper anode is installed to face the wafer. The diaphragm unit divides the internal space of the container into an upper space(120) and a lower space(110). The diaphragm unit opens the central part so that electrolyte from the container makes contact from the central part of the wafer.;COPYRIGHT KIPO 2012
机译:目的:提供一种在晶片上电镀铜层的方法和装置,以防止在电镀铜层时铜层中的缺陷,因为提供了用于洗涤晶片表面的清洗液。;构成:一种用于电镀铜层的装置晶片上的晶片包括容器(100),顶部单元,铜阳极(130),隔膜单元(160),旋转单元,电解质供应管,第一排出口和第二排出口。容器中装有电解液。顶部单元关闭容器并保持晶片(200)面对电解液。安装铜阳极以面对晶片。隔膜单元将容器的内部空间分成上部空间(120)和下部空间(110)。隔膜单元打开中心部分,以便来自容器的电解质与晶片的中心部分接触。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110115801A

    专利类型

  • 公开/公告日2011-10-24

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20100035332

  • 发明设计人 HWANG EUI SEONG;

    申请日2010-04-16

  • 分类号C25D7/12;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:53

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