METHOD FOR JOINTING AND FORMING THE VERTICAL CELL OF A SEMICONDUCTOR CAPABLE OF FORMING JUNCTION DEPTH TO BE SHALLOW AND APPLYING A DIFFUSION CONTROL FILM

摘要

PURPOSE: A method for jointing and forming the vertical cell of a semiconductor is provided to improve the step coverage of a diffusion control film which is formed in a subsequent process by forming an undoped film which fills the opening of an insulating layer.;CONSTITUTION: An active area(303), which is separated with a trench(302), is formed in a substrate(301). An insulating layer with an opening is formed in the sidewall of the active area. The undoped film(309A) filling the opening is formed. A diffusion control film(310) is formed in the front which includes the undoped film. Junction(313) is formed in the part of an exposed sidewall.;COPYRIGHT KIPO 2012