Composition for P-Typed Oxide Semiconductor Thin Film and Method for Preparing P-Typed Oxide Semiconductor Thin Film

摘要

PURPOSE: A composition for a p-type oxide semiconductor thin film and a method for manufacturing the p-type oxide semiconductor thin film are provided to simplify a manufacturing process by simultaneously depositing a rare earth-based element doped-zinc oxide and a copper metal. CONSTITUTION: A zinc oxide is doped with a rare earth-based element in order to form a first target(S11). A second target which is based on a copper metal is formed(S12). The first target and the second target are simultaneously deposited to form an oxide semiconductor thin film(S13). The rare earth-based element is selected from a group which includes praseodymium(Pr), dysprosium(Dy), europium(Eu) and erbium(Er).