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METHOD FOR FORMING TRIPLE GATE OF SEMICONDUCTOR DEVICE AND TRIPLE GATE OF SEMICONDUCTOR FOR THE SAME
METHOD FOR FORMING TRIPLE GATE OF SEMICONDUCTOR DEVICE AND TRIPLE GATE OF SEMICONDUCTOR FOR THE SAME
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机译:形成半导体器件的三重栅极的方法和用于同一器件的三重栅极的形成方法
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摘要
PURPOSE: A method for forming a triple gate of a semiconductor device is provided to improve the characteristics and reliability of the device without damage due to plasma, by forming a trench through a vapor etching process. CONSTITUTION: A buffer layer and a hard mask are formed on a substrate. A hard mask pattern(104A) and a buffer layer pattern(102A) are formed by etching the hard mask and the buffer layer. A first and a second trench(108) are formed within the substrate by performing a vapor etching process using the hard mask pattern as an etch barrier layer. A filling insulation layer is formed to bury the first and the second trench. The hard mask pattern and the buffer layer pattern are removed. A gate insulating layer is formed on the substrate between the first and the second trench. A conductive film is formed to cover the gate insulating layer. A gate electrode is formed by etching the conductive film.
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