PROGRAMMING DEFFERENTLY SIZED MARGINS AND SENSING WITH COMPENSATIONS AT SELECT STATES FOR IMPROVED READ OPERATIONS IN NON-VOLATILE MEMORY

摘要

is the apparent threshold voltage shift of the memory cell when a non-volatile memory read operations compensate for floating gate coupling . The memory cell can be read using a reference value based on a level of charge read out from the memory of the neighboring cells. The incorrectly reads the neighboring cells may have a significant impact on the particular programming method, it is even more so when reading the neighboring cell for particular states or charge levels in particular in this way. In one embodiment, the memory cells are programmed to create a wider margin between the more specific it is more detrimental to incorrectly read the state of the neighboring cells. In addition, the memory cells are in one embodiment, not when reading at other reference levels, such as those where a wider margin has been created, when read at some reference level, a floating gate coupling based on the state of neighboring cells By compensation is read.