High Integrating Method of 1 Dimensional or 2 Dimensional Conductive Nanowires Using Charged Materials, and High Integrated Conductive Nanowires by the Same

摘要

PURPOSE: A high integration method of 1 dimensional or 2 dimensional conductive nanowires is provided to integrate 1 dimensional or 2 dimensional conductive nanowires by forming a electron beam resist layer patterned by nanounit of a linear or lattice form through an electron beam lithography. CONSTITUTION: A high integration method of 1 dimensional or 2 dimensional conductive nanowires comprises the steps of; forming a passivation layer on a substrate; coating an electron beam resist layer on the passivation layer and patterning the electron beam resist layer using electron beam lithography; forming an interlayer on the passivation layer exposed through an opening of the nano pattern; forming the nano pattern of the interlayer on the passivation layer by removing the electron beam resist layer of nano pattern; forming an adsorption layer on the interlayer; applying a solution including a charged material on the adsorption layer; and forming nano wires including charged materials; and forming conductive nano wires by applying nano particles charged opposite to the charged material.