adjacent memory cells of programming over programmed memory cells after detection

摘要

In a non- volatile semiconductor memory system ( or other type of memory system ) , the memory cell of the memory cell is programmed by changing the threshold voltage . Because of the difference in the programming speed of different memory cells in the system , there is a possibility that some of the memory cell is over programmed . That is , in one example , the threshold voltage will be moved quickly from the intended value or range of values . The invention includes determining whether the over programming due to the programming of the memory cell is the cell adjacent row .