Magnetoresistive random access memory Spin Transfer Torque AND WAYS OF DEVELOPMENT

摘要

FIELD: information technology.;SUBSTANCE: systems, circuits and methods for determining read and write voltages for a given word line transistor in spin transfer torque magnetoresistive random access memory (STT-MRAM) are disclosed. A first voltage can be supplied to the write operations so that the write operations occur in the saturation region of the word line transistor. A second voltage, which is less than the first voltage, can be supplied for read operations so that read operations occur in the linear region of the word line transistor.;EFFECT: short response time.;20 cl, 15 dwg