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Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writing
Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writing
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机译:具有自旋轨道写入的自旋传递扭矩磁阻随机存取存储器的交叉点架构
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摘要
A magnetic memory cell includes: a first spin-orbit interaction active layer; a first magnetic free layer on the first spin-orbit interaction active layer, the first magnetic free layer having a changeable magnetization; a first nonmagnetic spacer layer on the first magnetic free layer; a reference layer having a fixed magnetization on the first nonmagnetic spacer layer; a second nonmagnetic spacer layer on the reference layer; a second magnetic free layer on the second nonmagnetic spacer layer, the second magnetic free layer having a changeable magnetization; and a second spin-orbit interaction active layer on the second magnetic free layer.
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