Common source line architectures of a vertical hybrid spin-transfer torque (STT) and spin-orbit torque (SOT) magnetic random access memory

摘要

The present disclosure relates to hybrid spin-transfer torque (STT) and spin-orbit torque (SOT) magnetic random access memory (MRAM). The cells of the hybrid STT-SOT MRAM have magnetic tunnel junctions (MTJs) with some ferromagnetic layers whose magnetization is oriented perpendicular to the plane of the substrate, and some ferromagnetic layers whose magnetization is aligned in the plane of the substrate. The architecture leads to a high-density storage. The hybrid STT SOT MRAM lowers the programming current density while providing high switching speed and higher thermal stability.