Vertical hybrid spin torque transfer (STT) and spin orbit torque (SOT) magnetic random access memory shared source line architecture

摘要

The present disclosure relates to hybrid spin transfer torque (STT) and spin bit torque (SOT) magnetic random access memory (MRAM). A cell of a hybrid STT-SOT MRAM has several ferromagnetic multilayers whose magnetizations are oriented perpendicular to the plane of the substrate and several ferromagnetic multilayers whose magnetizations are aligned in the plane of the substrate. It has a magnetic tunnel junction (MTJ). This architecture results in high density memory. Hybrid STT-SOT MRAM has higher thermal stability with high switching speed, while lowering programming current density. [Selection diagram] Figure 1