A method for producing a trench structure with oxidation of clothing, for producing an integrated semiconductor circuit arrangement or of a chip, for producing a semiconductor component as well as with this method a semiconductor integrated circuit device, chip, produced a semiconductor device

摘要

A method for producing a trench structure with oxide liner comprising the steps of:(a) providing a half conductor material region (20) with a surface area (20a),(b) forming a trench (30) extending from the surface area (20a) of the half conductor material region (20) into the interior of the half conductor material region (20) and a wall area (30b) and a bottom portion (30a) comprises,(c) lining of the inner or a part in the interior of the trench (30) with a first oxidation layer (40) by means of oxidative conversion of the material of the wall section (30b) and / or of the floor portion (30a) in the interior of the trench or in each case of a part thereof in a first oxidation step,(d) forming a material layer (50) in the interior of the trench (30) and as a result of a partial or complete lining of the interior of the trench (30) with the material layer (50) in a the trench (30) and not be filled to the first oxidation layer (40) directly or by means of an oxidation barrier layer (45) indirectly adjoining manner and(e) performing a second oxidation step and..