Method for locally coating semiconductor circuits and discrete components with a thermal SiO 2 layer whose surfaces contain areas with needle-shaped structures in nanometer dimensions

摘要

Method for passivating the surface of silicon semiconductor devices by means of an SiO 2 layer, the needle-shaped structures having large aspect ratios in nano-dimensions, i. H. in the range below the usual wavelengths of light, characterized in that the surface of the silicon is exposed locally and then primary needle-like nanostructures in the silicon by reactive ion etching (RIE) using the working gases oxygen and SF6 in a single process step without additional use Means for targeted mask formation in structuring process, only by adjusting the process parameters so that the oxygen in the reaction point on the silicon wafer shows a self-masking effect and self-assembly of the needle-like structures takes place, and this structured silicon surface then by thermal oxidation completely in secondary, also needle-like SiO 2 structures is transferred.