A method for the production of an integrated circuit with gate - self-protection of, in which the integrated circuit comprises a mos - component and a bipolar component, wherein said method comprises the steps of:– Depositing a dielectric layer (20, 120, 220) by means of a semiconductor layer (14, 114, 214), in the electrically active (16, 116, 216) and electrically inactive zones (18, 118, 218) are formed;– Depositing a gate - conductor layer (22, 122, 222) by means of the dielectric layer (20, 120, 220);– Defining a base zone (24) of the bipolar component and a selected region (30, 32, 130, 132, 230, 232) of the mos - device, wherein in the selected zone (30, 32, 130, 132, 230, 232) of the mos - component, the dielectric layer (20, 120, 220) by means of an electrically active zone (16, 116, 216) of the semiconductor layer (14, 114, 214) is;– Removal of the gate - conductor layer (22, 122, 222) in the base zone (24) of the bipolar component and in the selected zone (30, 32,..
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