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Lighting system for use in microlithography projection exposure system for lighting reticle in object field for manufacturing semiconductor components by extreme UV lithography process, has selection device provided with selection mirror
Lighting system for use in microlithography projection exposure system for lighting reticle in object field for manufacturing semiconductor components by extreme UV lithography process, has selection device provided with selection mirror
The system (1) has a collector unit (5) for producing a focus (7) of illuminating light, and a reflective lattice (11) e.g. blazed grating and binary lattice, for producing diffraction orders (29) arranged in light direction according to the focus. An utilizable light wavelength selection device (13) is arranged after the lattice in the light direction in a plane that is optically coupled to the focus, where the selection device is provided with a selection mirror (19) that physically expands for selecting an utilizable light wavelength region. An independent claim is also included for a microlithography projection exposure system comprising a lighting system with a lattice for folding an illumination beam path such that a light direction of illuminating light radiated from a light source runs parallel to an object plane of an projection objective.
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