Contact elements of semiconductor devices, the metal lines a continuous transition to have a metallizing layer

摘要

In complex semiconductor components are contact elements in the contact plane prepared by the via holes are structured and the via holes with the metal of the first metallization layer are filled in a common deposition sequence. For this purpose, in some illustrative embodiments, a sacrificial fill material in the contact openings before the deposition of the dielectric material of the first metallization layer is provided.