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Volume acoustic resonator structures comprising a single material acoustics coupling layer, which has an inhomogeneous acoustic property

机译:体声谐振器结构,包括具有不均匀声特性的单一材料声耦合层

摘要

According to a representative embodiment, a baw - resonator structure: a first baw - resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer, which between the first lower electrode and the first upper electrode is disposed; and a second baw - resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer, which between the second bottom electrode and the second upper electrode is arranged. The baw - resonator structure also has a single material acoustics coupling layer is disposed between the first and second baw - resonator to. The individual material acoustics coupling layer has an inhomogeneous acoustic property by means of a thickness of the individual material acoustics coupling layer on.
机译:根据一个代表性实施例,一种a子-谐振器结构:第一ba子-谐振器,包括第一下部电极,第一上部电极和第一压电层,所述第一下部电极,第一上部电极和第一压电层设置在所述第一下部电极和所述第一上部电极之间。第二低音谐振器,其包括第二下部电极,第二上部电极和第二压电层,它们布置在第二下部电极和第二上部电极之间。所述低音-谐振器结构还具有单个材料声耦合层,其设置在所述第一和第二低音-谐振器之间。各个材料声学耦合层通过其上的各个材料声学耦合层的厚度而具有不均匀的声学特性。

著录项

  • 公开/公告号DE102011004553A1

    专利类型

  • 公开/公告日2011-08-25

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20111004553

  • 发明设计人

    申请日2011-02-22

  • 分类号H03H9/205;H03H3/02;

  • 国家 DE

  • 入库时间 2022-08-21 17:47:10

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