Brief description of the multiple implantation in a substrate.

摘要

The present invention relates to a process for the implantation atoms and / or ions in a substrate, comprising: a) a first implantation of ions or atoms to a first depth in the substrate, in order to form a first plane, b) at least a second implantation of ions or of at least one second depth in the substrate, which is different from the first depth, so as to form at least a second plane of the implantation.