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Brief description of the cleavage of a substrate.

机译:底物裂解的简要描述。

摘要

The present invention relates to a process for the cleavage of a substrate (1) in order to detach a layer (1 ′), comprising the following successive steps: (i) the formation of a structure (2), called the generatrix of the stresses, to locally of the surface of the substrate (1), adapted to expand or contract in a plane parallel to the surface of the substrate (1) under the effect of a heat treatment, (ii) the application to said structure of a suitable heat treatment so as to cause expansion or contraction of the said structure (2), so as to generate in the substrate (1) a plurality of local stresses, the combination of which generates a force greater than the mechanical strength of the substrate in a cleavage plane (c) parallel to the substrate surface defining the layer (1 ′) to detach, said stress leading to the cleavage of the substrate (1) according to the plane (c.).
机译:本发明涉及一种用于裂解基底(1)以分离层(1')的方法,该方法包括以下连续步骤:(i)形成结构(2),称为结构的母体。施加于基底(1)表面局部的应力,该应力适于在热处理的作用下在平行于基底(1)表面的平面内膨胀或收缩,(ii)在基底(1)的所述结构上的应用适当的热处理以引起所述结构(2)的膨胀或收缩,从而在基板(1)中产生多个局部应力,这些局部应力的组合产生的力大于基板中的机械强度。平行于基板表面的分裂平面(c)限定了要分离的层(1'),所述应力导致衬底(1)根据平面(c。)分裂。

著录项

  • 公开/公告号FR2969664A1

    专利类型

  • 公开/公告日2012-06-29

    原文格式PDF

  • 申请/专利权人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;

    申请/专利号FR20100061052

  • 发明设计人 MICHEL BRUEL;

    申请日2010-12-22

  • 分类号C30B33/00;H01L21/02;

  • 国家 FR

  • 入库时间 2022-08-21 17:04:03

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