Circuit for providing high voltage switched signal in response to input of logic level in low voltage during complementary metal oxide semiconductor technology, has n type power FET and p type power FET providing current to external load

摘要

The circuit has a power stage e.g. configuration of half-bridge, a p type power FET (21) comprising a grid with a driver (23) e.g. P type metal oxide semiconductor (MOS) driver and N type MOS (NMOS), a n type power FET (22) comprising a grid with a driver (24), reference differential voltage generators or a dedicated supply and a virtual mass. The n type power FET and the p type power FET provide the current to an external load e.g. loudspeaker of class-d type power audio amplifier.