首页> 外国专利> Class-AB follower type high voltage comparator and amplifier assembly for use in e.g. embedded audio circuit, has input stages with inputs that act as differential voltage inputs of assembly

Class-AB follower type high voltage comparator and amplifier assembly for use in e.g. embedded audio circuit, has input stages with inputs that act as differential voltage inputs of assembly

机译:AB类跟随器型高压比较器和放大器组件,用于例如嵌入式音频电路,具有输入级,输入级用作组件的差分电压输入

摘要

The assembly has thick gate metal oxide semiconductor (MOS) transistors that have silicon surfaces larger than that of thin gate extended drain MOS transistors. P- and N-type MOS input stages include inputs that act as differential voltage inputs of the assembly. Extended drain P-type MOS transistors (200, 201) include gates that are connected together and sources that are connected to a high voltage power supply (VDDHV).
机译:该组件具有厚栅极金属氧化物半导体(MOS)晶体管,该晶体管的硅表面大于薄栅极扩展漏极MOS晶体管的硅表面。 P型和N型MOS输入级包括用作组件差分电压输入的输入。扩展漏极P型MOS晶体管(200、201)包括连接在一起的栅极和连接到高压电源(VDDHV)的源极。

著录项

  • 公开/公告号FR2959630A1

    专利类型

  • 公开/公告日2011-11-04

    原文格式PDF

  • 申请/专利权人 CDDIC;

    申请/专利号FR20100001829

  • 发明设计人 AMRANI HAFID;CORDONNIER HUBERT;

    申请日2010-04-29

  • 分类号H03F3/45;

  • 国家 FR

  • 入库时间 2022-08-21 17:45:41

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