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SEMICONDUCTOR STORAGE DEVICE, DESIGNING METHOD OF SEMICONDUCTOR STORAGE DEVICE, AND DESIGNING SUPPORT DEVICE FOR SEMICONDUCTOR STORAGE DEVICE

机译:半导体存储装置,半导体存储装置的设计方法以及半导体存储装置的支持装置的设计

摘要

PROBLEM TO BE SOLVED: To optimize an overhead due to hierarchization of compile type macros.;SOLUTION: A memory cell array is constituted which includes a first bank having a first local memory cell array and a first local sense amplifier, and a second bank having a second local memory cell array and a second local sense amplifier. Here the second bank is arranged side by side with the first bank along a global bit line direction. The first local sense amplifier preferably has performance suitably designed based upon the number of memory cells included in the first local memory cell array or the distance from the first local sense amplifier to a driver circuit. Further, the second local sense amplifier preferably has performance suitably designed based upon the number of memory cells included in the second local memory cell array or the distance from the second local sense amplifier to the driver circuit.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:为了优化由于编译类型宏的分层而引起的开销;解决方案:构成存储单元阵列,该存储单元阵列包括具有第一局部存储单元阵列和第一局部读出放大器的第一存储体,以及具有第一局部存储单元阵列的第二存储体。第二本地存储单元阵列和第二本地读出放大器。在此,第二存储体沿着全局位线方向与第一存储体并排布置。第一本地读出放大器优选地具有基于包括在第一本地存储单元阵列中的存储单元的数量或从第一本地读出放大器到驱动器电路的距离而适当设计的性能。此外,第二本地感测放大器优选地具有基于第二本地存储单元阵列中包括的存储单元的数量或从第二本地感测放大器到驱动器电路的距离而适当设计的性能。版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012146371A

    专利类型

  • 公开/公告日2012-08-02

    原文格式PDF

  • 申请/专利权人 RENESAS ELECTRONICS CORP;

    申请/专利号JP20110005267

  • 发明设计人 SAITO TOSHIO;

    申请日2011-01-13

  • 分类号G11C11/41;G11C11/413;

  • 国家 JP

  • 入库时间 2022-08-21 17:43:38

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