A defect detection method for a silicon carbide single crystal wafer, and a method of manufacturing a silicon carbide semiconductor device

摘要

PPROBLEM TO BE SOLVED: To specify a position and type of a specific basal-plane defect in a wafer surface nondestructively by discriminating the basal-plane defect from other dislocations and stacking faults when it is intended to manufacture a silicon carbide semiconductor device from a silicon carbide single crystal wafer, and what is more, to manufacture, based on the specified result, a silicon carbide semiconductor device having device characteristics which are free of any influence coming from the crystal defects. PSOLUTION: The method of detecting defects of silicon carbide single crystal wafer is characterized by: making a reflection X-ray topographic measurement in a wafer surface of a silicon carbide single crystal wafer; detecting a specific basal-plane defect nondestructively by identifying a specific diffraction pattern on the basis of the X-ray diffraction data in the wafer surface obtained by the reflection X-ray topographic measurement; and acquiring positional information of the detected basal-plane defect in the wafer surface. In addition, the method of manufacturing silicon carbide semiconductor device is set up using the method of detecting defects. PCOPYRIGHT: (C)2009,JPO&INPIT