And a method of manufacturing the bonded substrate GaN thin film, as well as processes for the preparation thereof and the GaN-based semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a GaN thin film bonded substrate and its manufacturing method where the GaN thin film is firmly bonded to a different kind of substrate whose chemical constitution is distinct from the GaN; and also to provide a GaN system semiconductor device and its manufacturing method including at least one layer of the GaN system semiconductor layers formed on the GaN thin film, so as to reduce the manufacturing cost of the semiconductor device.;SOLUTION: The manufacturing method of the GaN thin film bonding substrate 1 comprises: a process for bonding a different kind of substrate 20 whose chemical constitution is distinct from the GaN to a GaN bulk crystal 10; and a process for forming a GaN thin film 10a on the different kind of substrate 20, by dividing the GaN bulk crystal 10 by a plane 10t having a distance of 0.1 μm or more and 100 μm or less from the interface with the different kind of substrate 20. The maximum surface roughness Rmax of the bonding surface of the GaN bulk crystal is 20 μm or less.;COPYRIGHT: (C)2008,JPO&INPIT