首页> 外国专利> METHOD FOR MEASURING SEMICONDUCTOR TYPE CNT CONTENT IN CARBON NANO-TUBE (CNT), AND METHOD FOR MANUFACTURING CNT SENSOR

METHOD FOR MEASURING SEMICONDUCTOR TYPE CNT CONTENT IN CARBON NANO-TUBE (CNT), AND METHOD FOR MANUFACTURING CNT SENSOR

机译:碳纳米管(CNT)中半导体型CNT含量的测量方法及制造CNT传感器的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring semiconductor type CNT content in a CNT by which measurement corresponding to electric characteristics is possible.;SOLUTION: The method for measuring the semiconductor type CNT content in the CNT includes: an on/off ratio measurement process of measuring on/off ratio of a field effect transistor (FET) which has a channel formed by the carbon nano-tube (CNT) by changing area density of the CNT in the channel; and a semiconductor type CNT content calculation process of calculating the semiconductor type CNT content in the CNT based on correlation between the on/off ratio and the CNT area density, on resistance of the FET, carrier mobility of the FET, or on current of the FET.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种用于测量CNT中的半导体类型CNT含量的方法,通过该方法可以进行对应于电特性的测量。解决方案:用于测量CNT中的半导体类型CNT含量的方法包括:开/关比通过改变沟道中CNT的面积密度来测量具有由碳纳米管(CNT)形成的沟道的场效应晶体管(FET)的通/断比的测量过程;半导体型CNT含量计算处理,其基于开/关比与CNT面积密度,FET的电阻,FET的载流子迁移率或电流的大小之间的相关性来计算CNT中的半导体型CNT的含量。场效应管;版权所有:(C)2012,日本特许厅和INPIT

著录项

  • 公开/公告号JP2012063314A

    专利类型

  • 公开/公告日2012-03-29

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP20100209524

  • 发明设计人 HONGO HIROO;

    申请日2010-09-17

  • 分类号G01N27/00;C01B31/02;

  • 国家 JP

  • 入库时间 2022-08-21 17:40:16

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