首页> 外国专利> RESIST FILM FOR ELECTRON BEAM, SUBSTRATE TO BE PROCESSED HAVING ORGANIC CONDUCTIVE FILM STACKED THEREON, METHOD FOR MANUFACTURING THE SUBSTRATE TO BE PROCESSED AND METHOD FOR FORMING RESIST PATTERN

RESIST FILM FOR ELECTRON BEAM, SUBSTRATE TO BE PROCESSED HAVING ORGANIC CONDUCTIVE FILM STACKED THEREON, METHOD FOR MANUFACTURING THE SUBSTRATE TO BE PROCESSED AND METHOD FOR FORMING RESIST PATTERN

机译:电子束用抗蚀剂膜,被加工物具有有机导电膜,其被堆叠,制造该被加工物的方法和形成抗蚀剂图案的方法

摘要

PROBLEM TO BE SOLVED: To provide a substrate to be processed, which can be efficiently diselectrified, and can stably form a resist pattern with a high precision thereon even when being irradiated with an electron beam having a high current density.SOLUTION: A substrate to be processed having a resist film for an electron beam and an organic conductive film stacked thereon has a conductive inorganic thin film formed on the substrate to be processed, as a surface layer, and at least the resist film for the electron beam and the organic conductive film stacked on the substrate in series. A face to be processed of the substrate to be processed has a region in which a part of the organic conductive film and the conductive inorganic thin film directly come into contact with each other.
机译:解决的问题:提供一种待处理的基板,该基板可以被有效地选择性地选择,并且即使在被具有高电流密度的电子束照射时也可以在其上稳定地形成具有高精度的抗蚀剂图案。在被处理基板上层叠有用于电子束的抗蚀剂膜和有机导电膜的被处理物,在被处理基板上形成有作为表面层的导电性无机薄膜,并且至少具有用于电子束的抗蚀剂膜和有机导电性膜。膜串联堆叠在基板上。待处理基板的待处理面具有其中有机导电膜的一部分和导电无机薄膜的一部分直接彼此接触的区域。

著录项

  • 公开/公告号JP2012028553A

    专利类型

  • 公开/公告日2012-02-09

    原文格式PDF

  • 申请/专利权人 SHIN ETSU CHEM CO LTD;

    申请/专利号JP20100165767

  • 发明设计人 YOSHIKAWA HIROKI;WATANABE SATOSHI;

    申请日2010-07-23

  • 分类号H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 17:40:13

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