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HOMOEPITAXIAL III-V NITRIDE ARTICLE, DEVICE, AND METHOD OF FORMING III-V NITRIDE HOMOEPITAXIAL LAYER
HOMOEPITAXIAL III-V NITRIDE ARTICLE, DEVICE, AND METHOD OF FORMING III-V NITRIDE HOMOEPITAXIAL LAYER
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机译:均质III-V氮化物制品,设备和形成III-V氮化物同质层的方法
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摘要
PROBLEM TO BE SOLVED: To provide a III-V nitride article that is useful for a device, such as LED and a high electron mobility transistor.;SOLUTION: There is provided a homoepitaxial III-V nitride article including a III-V nitride homoepitaxial layer which deposits on a free-standing III-V nitride substrate. The III-V nitride homoepitaxial layer has dislocation density of less than 1E6 /cm2 and has characteristics selected from: (i) having oxide between the III-V nitride homoepitaxial layer and the free-standing III-V nitride substrate; (ii) having an epi interlayer between the III-V nitride homoepitaxial layer and the free-standing III-V nitride substrate; and (iii) having offcuts of the free-standing III-V nitride substrate and having non (0001) homoepitaxial step flow crystal growth in the III-V nitride homoepitaxial layer.;COPYRIGHT: (C)2012,JPO&INPIT
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机译:解决的问题:提供一种III-V族氮化物制品,该制品可用于诸如LED和高电子迁移率晶体管的器件。解决方案:提供了一种包括III-V族氮化物同质外延层的同质外延III-V族氮化物制品。沉积在独立的III-V氮化物衬底上的镀层。 III-V氮化物同质外延层的位错密度小于1E6 / cm 2 Sup>,并具有以下特征:(i)III-V氮化物同质外延层与自支撑III-V之间具有氧化物V氮化物衬底; (ii)在III-V族氮化物同质外延层和独立式III-V族氮化物衬底之间具有外延夹层; (iii)具有独立的III-V氮化物衬底的切口,并且在III-V氮化物同质外延层中具有非(0001)同质外延阶梯流晶体生长。;版权所有:(C)2012,JPO&INPIT
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