SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR HAVING SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR HAVING SHORTING CHANNEL

摘要

PROBLEM TO BE SOLVED: To realize manufacturing of a high current, high voltage, low on-resistance, vertical SiC power MOSFET, which has been impractical, at least in part, due to the poor surface mobility of electrons in an inversion layer.SOLUTION: A silicon carbide metal-oxide semiconductor field effect transistor (MOSFET) and a method of fabricating the silicon carbide MOSFET are provided. The silicon carbide MOSFET has an n-type silicon carbide drift layer, spaced-apart p-type silicon carbide regions existing in the n-type silicon carbide drift layer and having n-type silicon carbide regions therein, and a nitrided oxide layer. The MOSFET also has n-type shorting channels extending from respective n-type silicon carbide regions through the p-type silicon carbide regions to the n-type silicon carbide drift layer.