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SUPER-LUMINESCENT DIODE, MANUFACTURING METHOD FOR THE SAME AND OCT DEVICE USING THE SUPER-LUMINESCENT DIODE AS LIGHT SOURCE

机译:超发光二极管,使用超发光二极管作为光源的同一器件和八器件的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a super-luminescent diode having high breakdown resistance that can control the shape of a wavelength spectrum and achieve high output.;SOLUTION: A super-luminescent diode has an active layer constituting an optical waveguide and outputs from the emission side of the optical waveguide spontaneous emission light which is amplified while propagating through the optical waveguide. The super-luminescent diode has laser beam irradiating means for irradiating the optical waveguide with a laser beam from the outside of the optical waveguide to set the active layer to an excitation state, plural LEDs which are configured to change the shape of spontaneous emission light propagating through the optical waveguide and emit light having different wavelengths respectively, and an optical absorption region that is formed in an area at an end portion side of the optical waveguide opposite to the emission end face of the optical waveguide and attenuates return light.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种具有高击穿电阻的超发光二极管,该超击穿二极管可以控制波长光谱的形状并实现高输出。解决方案:超发光二极管具有构成光波导的有源层,并从光波导的输出。光波导的发射侧自发发射光,在通过光波导传播的同时被放大。该超发光二极管具有用于从光波导的外部照射激光束以将有源层设定为激发状态的激光束照射单元,以及多个LED,其被配置为改变自发发射光的传播形状。穿过光波导并分别发射具有不同波长的光,并且在光波导的与光波导的发射端面相对的端部侧的区域中形成的光吸收区域使返回光衰减。 (C)2012,日本特许厅&INPIT

著录项

  • 公开/公告号JP2011243701A

    专利类型

  • 公开/公告日2011-12-01

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP20100113485

  • 发明设计人 SAI HIRONOBU;

    申请日2010-05-17

  • 分类号H01L33/08;H01L33/30;

  • 国家 JP

  • 入库时间 2022-08-21 17:39:36

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