Gallium Nitride Super-Luminescent Light Emitting Diodes for Optical Coherence Tomography Applications

摘要

The role of biasing of absorber sections in multi-contact GaN ~400nm SLEDs is discussed. We go on to assess such devices for OCT applications. Analysis of the SLED emission spectrum allows an axial resolution of 6.0μm to be deduced in OCT applications.