The ion beam developmental mechanics where it generates the device and the mannered null ion beam for measuring the emission which crosses beam angle and vis-a-vis the beam

摘要

This invention makes the production of the semiconductor device easy with the incident angular value of the ion beam which crosses in plane surface of the beam which is scanned and obtaining emission. The emission detector includes, the mask (310) with the profiler/the sensor (314) the Iriki ion beam (308) from bimuretsuto (312) is used in order to obtain, many vertical position (316,318) with measures beam current. These beam current measurable quantities are used in order to give vertical incident angular value, give the emission profile of the vertical direction which is useful in order at the same time to characterize the ion beam. These values are used by ion beam generator, these values are executed the value crow re te of desire when it is, the adjustment regarding the ion beam which it is located or occurs, or of processed ones.