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Memory device with a capacitor-less DRAM, a method of forming a capacitor-less DRAM, and a method of operating a capacitorless DRAM
Memory device with a capacitor-less DRAM, a method of forming a capacitor-less DRAM, and a method of operating a capacitorless DRAM
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机译:具有无电容器DRAM的存储装置,形成无电容器DRAM的方法以及操作无电容器DRAM的方法
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摘要
A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate is provided, and an array of silicon studs is defined within the silicon substrate. An insulator layer is defined atop at least a portion of the silicon substrate, and between the silicon studs. A silicon-over-insulator layer is defined surrounding the silicon studs atop the insulator layer, and a capacitorless DRAM is formed within and above the silicon-over-insulator layer.
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