A capacitor-less DRAM cell on 75nm gate length, 16nm thin fully depleted SOI device for high density embedded memories

摘要

A capacitor-less DRAM cell on very thin film (Tsi=16nm) and short gate length (Lg=75nm) fully depleted (FD) device is demonstrated for the first time. Memory operations mechanisms are presented and retention time compatible to eDRAM requirements is measured at 85/spl deg/C. Nondestructive reading is demonstrated at 25/spl deg/C and disturb margins are deeply investigated, showing the possibility of matrix integration. This study is then extended to another type of FD device: the very promising double gate architecture.