Production method of the mask which possesses sabumirimetoruapachiya for the sub millimeter conductive grid, the mask and the sub millimeter conductive grid which possess sabumirimetoruapachiya

摘要

As for this invention, the mask which possesses the sub millimeter open part (10) (1) in regard to production method, as for that method,- In order to obtain masking layer, it is stabilized in the first solvent and it accumulates the solution of the colloid nano- particle which is dispersed, here, the aforementioned nano- particle has the glass transition temperature T_g of given,- Until it possesses 2 dimensional network of the sub millimeter open part, being the mask which substantially possesses the mask territory edge of straight, it can obtain the mask which is in the zone which is called the network mask zone, drying the aforementioned masking layer at the temperature which is lower_g than the aforementioned temperature T the action,- The zone which does not have the masking on the surface at least mechanical of one marginal part of the aforementioned network mask zone and/or with optical removal, is formed. This invention, in addition, the aforementioned network mask which can with this way it regards the grid which possesses (1) and the conductive solid amount zone.