首页> 外国专利> Method of producing a mask with sub-millimeter openings for the sub-millimeter conductive grid, and the mask and the sub-millimeter conductive grid

Method of producing a mask with sub-millimeter openings for the sub-millimeter conductive grid, and the mask and the sub-millimeter conductive grid

机译:用于亚毫米导电网格的具有亚毫米开口的掩模的制造方法以及该掩模和亚毫米导电网格

摘要

A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a first solution of colloidal nanoparticles in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer, known as the first masking layer, is carried out at a temperature below said temperature Tg until a mask having a two-dimensional network of substantially straight-edged submillimetric openings, that defines a mask zone known as a network mask zone is obtained, a solid mask zone is formed by a liquid deposition, on the face, of a second masking zone, the solid mask zone being adjacent to and in contact with the network mask zone, and/or at least one cover zone is formed, the cover zone being in contact with the network mask zone, and/or after the drying of the first masking layer, a filled mask zone is formed by filling, via a liquid route, openings of a portion of the network mask zone. The invention also relates to the mask and the electroconductive grid obtained.
机译:一种用于制造具有亚微米级开口的掩模的方法,其中:对于掩模层,沉积胶体纳米颗粒在第一溶剂中的第一溶液,该颗粒具有给定的玻璃化转变温度Tg,该掩模层的干燥称为在低于所述温度Tg的温度下进行第一掩模层,直到获得具有基本直边的亚微米级开口的二维网络的掩模,该二维网络限定了被称为网络掩模区的掩模区,即固体掩模区通过在表面上第二掩蔽区的液体沉积形成第二掩蔽区,所述固体掩蔽区与网络掩蔽区相邻并与之接触,和/或形成至少一个覆盖区,所述覆盖区相接触用网络掩模区,和/或在第一掩模层干燥之后,通过经由液体路径填充网络掩模区的一部分的开口来形成填充的掩模区。本发明还涉及获得的掩模和导电格栅。

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