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Method of producing a mask with sub-millimeter openings for the sub-millimeter conductive grid, and the mask and the sub-millimeter conductive grid
Method of producing a mask with sub-millimeter openings for the sub-millimeter conductive grid, and the mask and the sub-millimeter conductive grid
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机译:用于亚毫米导电网格的具有亚毫米开口的掩模的制造方法以及该掩模和亚毫米导电网格
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摘要
A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a first solution of colloidal nanoparticles in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer, known as the first masking layer, is carried out at a temperature below said temperature Tg until a mask having a two-dimensional network of substantially straight-edged submillimetric openings, that defines a mask zone known as a network mask zone is obtained, a solid mask zone is formed by a liquid deposition, on the face, of a second masking zone, the solid mask zone being adjacent to and in contact with the network mask zone, and/or at least one cover zone is formed, the cover zone being in contact with the network mask zone, and/or after the drying of the first masking layer, a filled mask zone is formed by filling, via a liquid route, openings of a portion of the network mask zone. The invention also relates to the mask and the electroconductive grid obtained.
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